| Título |
X-ray absorption spectroscopy study at the Si K-edge of tungsten carbide-silicon carbide thin films |
| Autores |
Krzanowski J.E. , Palacín S. , Gutiérrez A. , Schäfers F. , Mertin M. , ENDRINO ARMENTEROS, JOSÉ LUIS, Soriano L. |
| Publicación externa |
Si |
| Medio |
SCRIPTA MATERIALIA |
| Alcance |
Article |
| Naturaleza |
Científica |
| Cuartil JCR |
1 |
| Cuartil SJR |
1 |
| Impacto JCR |
2.481 |
| Impacto SJR |
2.216 |
| Web |
https://www.scopus.com/inward/record.uri?eid=2-s2.0-34247177443&doi=10.1016%2fj.scriptamat.2007.03.001&partnerID=40&md5=62245aba58a0dc725715a3eeecf40687 |
| Fecha de publicacion |
01/01/2007 |
| ISI |
000246605300002 |
| Scopus Id |
2-s2.0-34247177443 |
| DOI |
10.1016/j.scriptamat.2007.03.001 |
| Abstract |
X-ray absorption spectroscopy (XAS) has been used to determine the compositional and structural nature of the phases formed in sputter-deposited W-Si-C films. The Si K-edge was examined to determine the presence and crystallinity of the SiC phase. For a film composition of 22% SiC, the XAS results show that there is at best only a minor amount of crystallization of SiC when deposited at 350 °C, but crystallization becomes more definitive at 600 °C. For a film with 29% SiC deposited at 350 °C, no crystalline SiC was detected. © 2007 Acta Materialia Inc. |
| Palabras clave |
Crystallization; Physical vapor deposition; Silicon carbide; Sputter deposition; Tungsten carbide; X ray absorption spectroscopy; X ray diffraction; Crystallinity; Film composition; K-edge; Structural nature; Thin films |
| Miembros de la Universidad Loyola |
|
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