| Título |
On the deactivation of the dopant and electronic structure in reactively sputtered transparent Al-doped ZnO thin films |
| Autores |
Horwat D. , Jullien M. , Capon F. , Pierson J.-F. , Andersson J. , ENDRINO ARMENTEROS, JOSÉ LUIS |
| Publicación externa |
Si |
| Medio |
JOURNAL OF PHYSICS D-APPLIED PHYSICS |
| Alcance |
Article |
| Naturaleza |
Científica |
| Cuartil JCR |
2 |
| Cuartil SJR |
1 |
| Impacto SJR |
1.292 |
| Web |
https://www.scopus.com/inward/record.uri?eid=2-s2.0-77949723156&doi=10.1088%2f0022-3727%2f43%2f13%2f132003&partnerID=40&md5=1f0b92f4663566b25057c856b1862d9e |
| Fecha de publicacion |
01/01/2010 |
| ISI |
000275750700003 |
| Scopus Id |
2-s2.0-77949723156 |
| DOI |
10.1088/0022-3727/43/13/132003 |
| Abstract |
We report on the possible origin of electrical heterogeneities in 4 at% Al-doped ZnO (AZO) reactively sputtered films. It is found through the Zn L 3 and Al K edge x-ray absorption near-edge structure that a fraction of the Al dopant is deactivated by its positioning in octahedral conformation with oxygen. This fraction as well as the conductivity, optical bandgap and c-axis parameter of ZnO wurtzite are all found to depend on the sample position during deposition. The present results suggest the formation of a metastable Al2O3(ZnO)m homologous phase that degrades the electrical conductivity. © 2010 IOP Publishing Ltd. |
| Palabras clave |
Al-doped ZnO; Electrical conductivity; Octahedral conformations; Sample position; Sputtered films; Wurtzites; X-ray absorption near-edge structure; ZnO; Doping (additives); Electric conductivity; Electronic structure; Oxygen; Zinc; Zinc oxide; Zinc sulfide; Aluminum |
| Miembros de la Universidad Loyola |
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